d a t a sh eet objective speci?cation supersedes data of 2002 oct 22 2004 aug 23 discrete semiconductors PBSS5350SA 50 v low v cesat pnp transistor b ook, halfpage m3d186
2004 aug 23 2 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA features low collector-emitter saturation voltage v cesat and corresponding r cesat high collector current capability i c and i cm high collector current gain h fe less heat generation leading to higher efficiency. applications low and medium power dc/dc convertors low voltage regulation (ldo) mosfet drivers supply line switching battery chargers. description pnp low v cesat transistor in a sot54 plastic package. npn complement: pbss4350sa. marking quick reference data pinning type number marking code PBSS5350SA 5350sa symbol parameter max. unit v ceo collector-emitter voltage - 50 v i c collector current (dc) - 2a i crp repetitive peak collector current - 3a r cesat equivalent on-resistance 135 m w pin description 1 collector 2 base 3 emitter handbook, halfpage 1 3 2 mam280 1 2 3 fig.1 simplified outline (sot54) and symbol.
2004 aug 23 3 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. operated under pulsed conditions: pulse width t p 100 ms; duty cycle d 0.25. 2. device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 3. device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 2 . thermal characteristics notes 1. operated under pulsed conditions: pulse width t p 100 ms; duty cycle d 0.25. 2. device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 3. device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 2 . symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 50 v v ceo collector-emitter voltage open base -- 50 v v ebo emitter-base voltage open collector -- 5v i c collector current (dc) -- 2a i crp repetitive peak collector current note 1 -- 3a i cm peak collector current single peak -- 5a i b base current (dc) -- 0.5 a p tot total power dissipation t amb 25 c; note 2 - 830 mw t amb 25 c; note 3 - 900 mw t amb 25 c; notes 1 and 2 - 1.2 w t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air; notes 1 and 2 104 k/w in free air; note 3 127 k/w in free air; note 2 150 k/w
2004 aug 23 4 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA characteristics t amb =25 c unless otherwise speci?ed. note 1. pulse test: t p 300 m s; d 0.02. symbol parameter conditions min. typ. max. unit i cbo collector-base cut-off current v cb = - 50 v; i e =0 --- 100 na v cb = - 50 v; i e = 0; t j = 150 c --- 50 m a i ebo emitter-base cut-off current v eb = - 5 v; i c =0 --- 100 na h fe dc current gain v ce = - 2 v; i c = - 100 ma 200 -- v ce = - 2 v; i c = - 500 ma 200 -- v ce = - 2 v; i c = - 1 a; note 1 200 -- v ce = - 2 v; i c = - 2 a; note 1 130 -- v ce = - 2 v; i c = - 3 a; note 1 80 -- v cesat collector-emitter saturation voltage i c = - 500 ma; i b = - 50 ma --- 90 mv i c = - 1 a; i b = - 50 ma --- 180 mv i c = - 2 a; i b = - 100 ma; note 1 --- 320 mv i c = - 2 a; i b = - 200 ma; note 1 --- 270 mv i c = - 3 a; i b = - 300 ma; note 1 --- 390 mv r cesat equivalent on-resistance i c = - 2 a; i b = - 200 ma; note 1 - 90 135 m w v besat base-emitter saturation voltage i c = - 2 a; i b = - 100 ma; note 1 --- 1.1 v i c = - 3 a; i b = - 300 ma; note 1 --- 1.2 v v beon base-emitter turn-on voltage v ce = - 2 v; i c = - 1 a; note 1 --- 1.2 v f t transition frequency i c = - 100 ma; v ce = - 5v; f = 100 mhz 100 -- mhz c c collector capacitance v cb = - 10 v; i e =i e = 0; f = 1 mhz -- 35 pf
2004 aug 23 5 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA handbook, halfpage 0 1000 200 400 600 800 mld885 - 10 - 1 - 1 (1) - 10 i c (ma) h fe - 10 2 - 10 3 - 10 4 (3) (2) fig.2 dc current gain as a function of collector current; typical values. v ce = - 2v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage mld886 0 - 1200 - 400 - 800 - 10 - 1 - 1 - 10 i c (ma) v be (mv) - 10 2 - 10 3 - 10 4 (1) (3) (2) fig.3 base-emitter voltage as a function of collector current; typical values. v ce = - 2v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c. handbook, halfpage mld887 - 100 - 1300 - 500 - 900 - 10 - 1 - 1 - 10 i c (ma) v besat (mv) - 10 2 - 10 3 - 10 4 (1) (3) (2) fig.4 base-emitter saturation voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c. handbook, halfpage mld888 - 100 - 1300 - 500 - 900 - 10 - 1 - 1 - 10 i c (ma) v besat (mv) - 10 2 - 10 3 - 10 4 (1) (3) (2) fig.5 base-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c.
2004 aug 23 6 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA handbook, halfpage mld889 - 10 - 10 3 - 10 2 - 10 - 1 - 1 - 10 i c (ma) v cesat (mv) - 10 2 - 10 3 - 10 4 - 1 (3) (2) (1) fig.6 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage mld890 - 10 - 10 3 - 10 2 - 10 - 1 - 1 - 10 i c (ma) v cesat (mv) - 10 2 - 10 3 - 10 4 - 1 (3) (2) (1) fig.7 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage mld891 - 10 4 - 10 3 - 10 2 - 10 - 1 -- 10 - 1 - 1 v cesat (mv) i c (ma) - 10 - 10 2 - 10 3 - 10 4 (1) (3) (2) fig.8 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 50. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage mld892 - 10 4 - 10 3 - 10 2 - 10 - 1 - 1 - 10 i c (ma) v cesat (mv) - 10 2 - 10 3 - 10 4 - 10 (3) (1) (2) fig.9 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 100. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c.
2004 aug 23 7 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA handbook, halfpage 10 3 10 2 10 1 10 - 2 10 - 1 mld893 - 10 - 1 - 1 - 10 i c (ma) r cesat ( w ) - 10 3 - 10 2 - 10 4 (1) (3) (2) fig.10 equivalent on-resistance as a function of collector current; typical values. i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c.
2004 aug 23 8 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA package outline unit a references outline version european projection issue date iec jedec jeita mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) max. 2.5 b 1 0.66 0.55 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43a 97-02-28 04-06-28 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3
2004 aug 23 9 philips semiconductors objective speci?cation 50 v low v cesat pnp transistor PBSS5350SA data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2004 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r75/02/pp 10 date of release: 2004 aug 23 document order number: 9397 750 13639
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